AIXTRON partners with ROHM to scale GaN power device production
ROHM selected AIXTRON's G10-GaN system for in-house GaN epitaxy at its Hamamatsu plant, aiming for 8-inch wafers for 650V and 100V power devices.
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Deposition equipment manufacturer for semiconductor industry
aixtron.comLast updated
In short: AIXTRON raised its 2026 financial guidance and launched a €450 million convertible bond following record demand for its optoelectronics systems.
ROHM selected AIXTRON's G10-GaN system for in-house GaN epitaxy at its Hamamatsu plant, aiming for 8-inch wafers for 650V and 100V power devices.
The CCS R&D-system will enable advanced semiconductor research on GaN and 2D materials, funded by CHIPS Act.
Goldman Sachs holds 9.13% voting rights via shares and instruments as of May 21, 2026.
Morgan Stanley's stake decreased from 6.54% to 5.27% due to share disposal.
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